Analysis of dopant diffusion and defects in SiGe-channel Implant Free Quantum Well (IFQW) devices using an atomistic kinetic Monte Carlo approach

Author

Noda, Toshio ; Mitard, J. ; Witters, L. ; Hellings, Geert ; Vrancken, C. ; Eyben, P. ; Thean, A. ; Horiguchi, Naoto ; Vandervorst, W.

Author_Institution

Panasonic Corp., Uozu, Japan

fYear

2012

fDate

10-13 Dec. 2012

Abstract

An analysis of dopant diffusion and defects in SiGe-channel (SiGe-ch) Implant-Free Quantum Well (IFQW) using an atomistic KMC approach are shown. B-doped SiGe layer is used for S/D-extension formation. KMC and SSRM show that B migration from B-doped SiGe raised-S/D can form S/D-extension gate overlap. Arsenic Vt-adjustment implant before SiGe-ch formation instead of Arsenic pocket implant after SiGe-ch formation can reduce Arsenic concentration in channel region and shows better Vt-mismatch.

Keywords

Ge-Si alloys; Monte Carlo methods; arsenic; boron; diffusion; quantum well devices; IFQW device defect; S-D- extension gate overlap; S-D-extension formation; SSRM; SiGe-ch formation; SiGe:B; arsenic Vt-adjustment implant; arsenic pocket implant; atomistic KMC approach; atomistic kinetic Monte Carlo approach; channel implant free quantum well device defect; dopant diffusion; Annealing; Implants; Logic gates; MOSFETs; Resistance; Silicon; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4673-4872-0

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2012.6479135

Filename

6479135