Title :
A research of RHEED in analysis of growth model and interplanar distance of ZnO films
Author :
Wang, Zhaoyang ; Zhao, Jie
Author_Institution :
Sch. of Sci., Shenyang Inst. of Aeronaut. Eng., Shenyang, China
Abstract :
Reflection high-energy electron diffraction (RHEED) is one of the instruments which can exam the surface of the material sensitively. RHEED was often used as a tool of qualitative analysis and seldom used as quantitative analysis in crystal materials. In this paper, RHEED was attempted to analyze and calculate the interplanar distance of two important directions in (0001) plane of ZnO films and desired results were obtained. This shows that RHEED can be used to analyze crystal structure precisely.
Keywords :
II-VI semiconductors; crystal structure; electron diffraction; molecular beam epitaxial growth; semiconductor growth; semiconductor thin films; wide band gap semiconductors; zinc compounds; RHEED; Si; ZnO; crystal structure; growth model; interplanar distance; molecular beam epitaxy; reflection high-energy electron diffraction; thin films; Crystallization; Diffraction; Electron beams; Instruments; Optical films; Rough surfaces; Surface morphology; Surface reconstruction; Surface roughness; Zinc oxide; RHEED; ZnO thin films; interplanar distance;
Conference_Titel :
Electronic Measurement & Instruments, 2009. ICEMI '09. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3863-1
Electronic_ISBN :
978-1-4244-3864-8
DOI :
10.1109/ICEMI.2009.5274541
