A research of RHEED in analysis of growth model and interplanar distance of ZnO films

Author

Wang, Zhaoyang ; Zhao, Jie

Author_Institution

Sch. of Sci., Shenyang Inst. of Aeronaut. Eng., Shenyang, China

fYear

2009

fDate

16-19 Aug. 2009

Firstpage

15373

Lastpage

16103

Abstract

Reflection high-energy electron diffraction (RHEED) is one of the instruments which can exam the surface of the material sensitively. RHEED was often used as a tool of qualitative analysis and seldom used as quantitative analysis in crystal materials. In this paper, RHEED was attempted to analyze and calculate the interplanar distance of two important directions in (0001) plane of ZnO films and desired results were obtained. This shows that RHEED can be used to analyze crystal structure precisely.

Keywords

II-VI semiconductors; crystal structure; electron diffraction; molecular beam epitaxial growth; semiconductor growth; semiconductor thin films; wide band gap semiconductors; zinc compounds; RHEED; Si; ZnO; crystal structure; growth model; interplanar distance; molecular beam epitaxy; reflection high-energy electron diffraction; thin films; Crystallization; Diffraction; Electron beams; Instruments; Optical films; Rough surfaces; Surface morphology; Surface reconstruction; Surface roughness; Zinc oxide; RHEED; ZnO thin films; interplanar distance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Measurement & Instruments, 2009. ICEMI '09. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3863-1

Electronic_ISBN

978-1-4244-3864-8

Type

conf

DOI

10.1109/ICEMI.2009.5274541

Filename

5274541