Title :
Analytical expression of HD3 due to non-linear MOS switch in MOSFET-C sample and hold circuits
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
An analytical expression for HD3 (third harmonic distortion) due to the input-dependent, non-linear ON resistance of the MOS switch in a MOSFET-C sample and hold circuit is developed. The developed expression is suitable for hand calculation, and for a given target value of HD3, it can be used for an initial design of the MOS switch. The accuracy of the developed expression has been verified through simulation in 0.18 μm and 0.25 μm CMOS processes.
Keywords :
CMOS integrated circuits; MOSFET circuits; field effect transistor switches; harmonic distortion; nonlinear network analysis; sample and hold circuits; 0.18 micron; 0.25 micron; HD3; MOSFET-C sample and hold circuits; nonlinear MOS switch; nonlinear ON resistance; third harmonic distortion; CMOS process; CMOS technology; Circuit simulation; Clocks; Equations; MOSFET circuits; Nonlinear distortion; Switches; Switching circuits; Threshold voltage;
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
DOI :
10.1109/ISCAS.2005.1465071
