Title :
A Monte Carlo simulation of electron transport in Cu nano-interconnects: Suppression of resistance degradation due to LER/LWR
Author :
Kurusu, T. ; Tanimoto, Hiroshi ; Wada, Masaki ; Isobayashi, Atsunobu ; Kajita, Akihiro ; Aoki, Naokazu ; Toyoshima, Yoshiaki
Author_Institution :
Center for Semicond. R&D, Toshiba Corp., Yokohama, Japan
Abstract :
The effect of Line-Edge Roughness (LER) on electrical resistance in nanoscale Cu wires is investigated utilizing a semi-classical Monte Carlo method for simulating electron transport in metallic wires. Dependence of parameters characterizing LER such as amplitude, correlation length, and correlation between line-edges on electrical resistance is presented, and an optimal wire structure to suppress resistance degradation due to LER/LWR is discussed.
Keywords :
Monte Carlo methods; copper; electric resistance; electron transport theory; integrated circuit interconnections; nanoelectronics; wires (electric); LER; LWR; Monte Carlo simulation; amplitude; copper nanointerconnects; correlation length; electrical resistance; electron transport; line-edge roughness; metallic wires; nanoscale copper wires; optimal wire structure; resistance degradation suppression; semiclassical Monte Carlo method; Conductivity; Correlation; Degradation; Monte Carlo methods; Resistance; Scattering; Wires;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479140
