A Monte Carlo simulation of electron transport in Cu nano-interconnects: Suppression of resistance degradation due to LER/LWR

Author

Kurusu, T. ; Tanimoto, Hiroshi ; Wada, Masaki ; Isobayashi, Atsunobu ; Kajita, Akihiro ; Aoki, Naokazu ; Toyoshima, Yoshiaki

Author_Institution

Center for Semicond. R&D, Toshiba Corp., Yokohama, Japan

fYear

2012

fDate

10-13 Dec. 2012

Abstract

The effect of Line-Edge Roughness (LER) on electrical resistance in nanoscale Cu wires is investigated utilizing a semi-classical Monte Carlo method for simulating electron transport in metallic wires. Dependence of parameters characterizing LER such as amplitude, correlation length, and correlation between line-edges on electrical resistance is presented, and an optimal wire structure to suppress resistance degradation due to LER/LWR is discussed.

Keywords

Monte Carlo methods; copper; electric resistance; electron transport theory; integrated circuit interconnections; nanoelectronics; wires (electric); LER; LWR; Monte Carlo simulation; amplitude; copper nanointerconnects; correlation length; electrical resistance; electron transport; line-edge roughness; metallic wires; nanoscale copper wires; optimal wire structure; resistance degradation suppression; semiclassical Monte Carlo method; Conductivity; Correlation; Degradation; Monte Carlo methods; Resistance; Scattering; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4673-4872-0

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2012.6479140

Filename

6479140