Title :
A low power phase change memory using low thermal conductive doped-Ge2Sb2Te 5 with nano-crystalline structure
Author :
Morikawa, T. ; Akita, K. ; Ohyanagi, T. ; Kitamura, Masayuki ; Kinoshita, Moto ; Tai, M. ; Takaura, N.
Author_Institution :
Low-Power Electron. Assoc. & Project, Tsukuba, Japan
Abstract :
A new phase change memory of 68% lower reset current is demonstrated using nano-crystalline doped-Ge2Sb2Te5 with high electrical resistivity and low thermal conductivity. Endurance of > 1×107 cycles and enhanced crystallization temperature (~ 215 oC) are also achieved. Nano-crystalline GST makes it possible to design 4F2 cross-point cells with simple bottom electrode structure.
Keywords :
antimony compounds; crystallisation; electrical resistivity; germanium compounds; low-power electronics; nanostructured materials; phase change memories; thermal conductivity; Ge2Sb2Te5; cross-point cell; crystallization temperature; electrical resistivity; electrode structure; low power phase change memory; nano-crystalline structure; thermal conductivy; Conductivity; Materials; Nanoscale devices; Phase change memory; Thermal conductivity; Thermal resistance;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479144
