• DocumentCode
    3544832
  • Title

    E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator

  • Author

    Kim, Do-Hyeon ; Hundal, P. ; Papavasiliou, Anthony ; Chen, Peng ; King, Candice ; Paniagua, J. ; Urteaga, M. ; Brar, B. ; Kim, Young Gil ; Kuo, J.-M. ; Li, Jie ; Pinsukanjana, P. ; Kao, Y.C.

  • Author_Institution
    Teledyne Sci. Co., Thousand Oaks, CA, USA
  • fYear
    2012
  • fDate
    10-13 Dec. 2012
  • Abstract
    We have successfully demonstrated a three-step recess process to fabricate high performance E-mode planar InGaAs MOSFETs. Our devices feature a composite gate insulator with InP/Al2O3/HfO2. An Lg=35 nm InGaAs MOSFET with EOT = ~ 0.8 nm exhibits VT = 0.17 V, RON = 285 Ohm-μm, DIBL = 135 mV/V and S = 115 mV/dec, as well as a negligible dispersion and hysteresis behavior. Most importantly, our device displays the highest value of gm_max > 2 mS/μm at VDS = 0.5 V in any III-V MOSFETs.
  • Keywords
    MOSFET; composite insulating materials; hysteresis; indium compounds; E-mode planar MOSFET; In0.7Ga0.3As; InP-Al2O3-HfO2; composite insulator; dispersion behavior; hysteresis behavior; Aluminum oxide; Hafnium compounds; Indium gallium arsenide; Indium phosphide; Insulators; Logic gates; MOSFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2012 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4673-4872-0
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2012.6479150
  • Filename
    6479150
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3544832