Title :
Mechanism of dangling bond elimination on As-rich InGaAs surface
Author :
Melitz, W. ; Chagarov, E. ; Kent, Thomas ; Droopad, Ravi ; Ahn, Jeongseob ; Long, Ruixing ; McIntyre, Paul C. ; Kummel, A.C.
Abstract :
This work demonstrates with STM, STS, DFT, and device studies that TMA prepulsing on the As-rich InGaAs (2×4) surface reduces the trap state density by reducing As-As dimer bonds and As dangling bonds.
Keywords :
III-V semiconductors; aluminium compounds; dangling bonds; density functional theory; gallium arsenide; indium compounds; passivation; scanning tunnelling microscopy; scanning tunnelling spectroscopy; semiconductor device models; DFT modelling; InGaAs; STM; STS; TMA prepulsing; dangling bond elimination; device study; dimer bonds; passivation; trap state density; Bonding; Capacitance-voltage characteristics; Discrete Fourier transforms; Passivation; Surface cleaning; Temperature;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479152
