DocumentCode :
3544859
Title :
30nm enhancement-mode In0.53Ga0.47As MOSFETs on Si substrates grown by MOCVD exhibiting high transconductance and low on-resistance
Author :
Xiuju Zhou ; Qiang Li ; Chak Wah Tang ; Kei May Lau
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear :
2012
fDate :
10-13 Dec. 2012
Abstract :
This paper describes the development of 30nm enhancement-mode In0.53Ga0.47As MOSFETs grown on Si substrates featuring Al2O3/InAlAs composite gate stack with extrinsic transconductance of 1700mS/mm at Vds=0.5V and on-resistance of 157 Ω·μm. A low-temperature process of post metallization annealing has been developed to achieve enhancement-mode operation. Capacitance-Voltage measurements and TEM observation were carried out to investigate the mechanisms of threshold voltage shift. Furthermore, device scalability down to 30nm is reported.
Keywords :
III-V semiconductors; MOCVD; MOSFET; alumina; indium compounds; semiconductor device metallisation; silicon; Al2O3-InAlAs; In0.53Ga0.47As; MOCVD; MOSFET; Si; Si substrates; TEM observation; capacitance-voltage measurements; enhancement-mode operation; metallization annealing; resistivity 0.157 ohmm; size 30 nm; threshold voltage shift; voltage 0.5 V; Aluminum oxide; Indium gallium arsenide; Logic gates; MOSFETs; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2012.6479153
Filename :
6479153
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3544859
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