30nm enhancement-mode In0.53Ga0.47As MOSFETs on Si substrates grown by MOCVD exhibiting high transconductance and low on-resistance

Author

Xiuju Zhou ; Qiang Li ; Chak Wah Tang ; Kei May Lau

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2012

fDate

10-13 Dec. 2012

Abstract

This paper describes the development of 30nm enhancement-mode In_0.53Ga_0.47As MOSFETs grown on Si substrates featuring Al₂O₃/InAlAs composite gate stack with extrinsic transconductance of 1700mS/mm at V_ds=0.5V and on-resistance of 157 Ω·μm. A low-temperature process of post metallization annealing has been developed to achieve enhancement-mode operation. Capacitance-Voltage measurements and TEM observation were carried out to investigate the mechanisms of threshold voltage shift. Furthermore, device scalability down to 30nm is reported.

Keywords

III-V semiconductors; MOCVD; MOSFET; alumina; indium compounds; semiconductor device metallisation; silicon; Al₂O₃-InAlAs; In_0.53Ga_0.47As; MOCVD; MOSFET; Si; Si substrates; TEM observation; capacitance-voltage measurements; enhancement-mode operation; metallization annealing; resistivity 0.157 ohmm; size 30 nm; threshold voltage shift; voltage 0.5 V; Aluminum oxide; Indium gallium arsenide; Logic gates; MOSFETs; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4673-4872-0

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2012.6479153

Filename

6479153