DocumentCode
3544873
Title
The evolution of dense embedded memory in high performance logic technologies
Author
Iyer, Srikanth S.
Author_Institution
Syst. & Technol. Group, IBM Corp., Hopewell Junction, NY, USA
fYear
2012
fDate
10-13 Dec. 2012
Abstract
Embedded memory (eMemory) plays a key role in the performance of modern multi-core processors, and for a broad class of cache-balanced systems, can account for up to 70% of the die area. Memory is highly diagnosable and is an excellent process-learning vehicle besides pushing lithographic and process capability to the limit. Here we look at ways to increase embedded memory capacity and performance in two ways: integrating dense embedded DRAM using Deep Trench (DT) capacitors into high performance logic and using 3-dimensional integration (3Di) to integrate even larger amounts of cache close to the processing units. We also address how the DT capacitors can significantly improve overall chip performance by reducing mid-frequency power supply noise on these chips. We show that this holistic approach to embedded memory makes judicious use of SRAM, DRAM and extends to 3Di and provides the basis of “orthogonal” scaling beyond that provided by conventional lithographic scaling alone.
Keywords
DRAM chips; SRAM chips; cache storage; capacitors; logic circuits; microprocessor chips; three-dimensional integrated circuits; 3Di; DRAM; DT capacitors; SRAM; cache-balanced systems; deep trench capacitors; dense embedded DRAM; dense embedded memory evolution; eMemory; embedded memory capacity; excellent process-learning vehicle; high performance logic technologies; lithographic scaling; midfrequency power supply noise; modern multicore processors; orthogonal scaling; three-dimensional integration; Capacitors; Complexity theory; Face; Random access memory; Silicon; Stacking; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4673-4872-0
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2012.6479155
Filename
6479155
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