Title :
High-contrast polarization switches with a sensitivity of 3-dB/degree based on ordered GaInP
Author :
Kiesel, P. ; Kippenberg, T. ; Krauss, J. ; Greger, E. ; Moser, M. ; Dohler, G.H.
Author_Institution :
Inst. fur Tech. Phys., Erlangen, Germany
Abstract :
Summary form only given. We show that the strong polarization anisotropy of the absorption coefficient of ordered GaInP can be exploited to realize polarization-sensitive threshold switches. The photoconductive switch is basically a p-i-n photodiode and a field effect transistor integrated into a single device. Its principle is based on the light-induced increase of the n-layer conductance. First results show a switching contrast of 50 dB and a maximum sensitivity of /spl sim/ 3 dB/degree.
Keywords :
III-V semiconductors; absorption coefficients; gallium compounds; indium compounds; integrated optoelectronics; light polarisation; p-i-n photodiodes; photoconducting switches; GaInP; absorption coefficient; field effect transistor; high-contrast polarization switches; light-induced increase; n-layer conductance; ordered GaInP; p-i-n photodiode; photoconductive switch; polarization-sensitive threshold switches; sensitivity; strong polarization anisotropy; switching contrast; Absorption; Anisotropic magnetoresistance; Contacts; FETs; Geometrical optics; Optical polarization; Optical sensors; Optical superlattices; Switches; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676336
