Oxide-confined vertical-cavity semiconductor optical amplifier for 980-nm wavelength

Author

Wiedenmann, D. ; Jung, Cheolkon ; Grabherr, M. ; Jager, Rudolf ; Martin, U. ; Michalzik, Rainer ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

fYear

1998

fDate

3-8 May 1998

Firstpage

378

Lastpage

379

Abstract

Summary form only given. We have demonstrated an oxide-confined VCSOA with distinctly improved performance. Dynamic operation at 1 Gbit/s data rate shows the potential for applications in, for example, highly parallel switching networks. The wavelength-selective amplification behavior makes this device especially attractive for wavelength division multiplexing environments.

Keywords

optical transmitters; quantum well lasers; semiconductor optical amplifiers; surface emitting lasers; 1 Gbit/s; 980 nm; current confinement; dynamic operation; highly parallel switching networks; improved performance; oxide-confined; quantum well laser; selective oxidation; temporal output; vertical-cavity semiconductor optical amplifier; wavelength division multiplexing; wavelength-selective amplification behavior; High speed optical techniques; Optical modulation; Optical polarization; Optical saturation; Power generation; Semiconductor optical amplifiers; Stimulated emission; Switches; Vertical cavity surface emitting lasers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676338

Filename

676338