DocumentCode :
3544900
Title :
Improved thermal conductivity by vertical graphene contact formation for thermal TSV
Author :
Nihei, Mizuhisa ; Kawabata, Akio ; Murakami, Toshiyuki ; Sato, Mitsuhisa ; Yokoyama, Naoki
Author_Institution :
Collaborative Res. Team Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear :
2012
fDate :
10-13 Dec. 2012
Abstract :
This paper reports the tailoring thermal conductivity of novel dense vertical and horizontal graphene (DVHG) structures, which we previously discovered. By removing horizontal graphene layers, resulting in forming vertical graphene contacts to the electrode, we not only improved the thermal conductivity by a factor of 10 but also improved the electrical conductivity by a factor of 100. The pyrolytic graphite, grown at a higher temperature than the DVHG, showed a high thermal conductivity of 1426 W/mK by forming vertical graphene contacts. Although the DVHG showed poor thermal properties at this point, we found that the vertical graphene contact formation can be an important technology to realize high thermal conductivity for carbon-based thermal through-silicon-vias (TSV).
Keywords :
graphene; thermal conductivity; thermal management (packaging); three-dimensional integrated circuits; DVHG structure; carbon-based thermal through-silicon-vias; dense vertical and horizontal graphene structure; electrical conductivity; electrode; horizontal graphene layer; pyrolytic graphite; thermal TSV; thermal conductivity; thermal properties; vertical graphene contact formation; Argon; Conductivity; Electrodes; Etching; Graphene; Resistance; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2012.6479159
Filename :
6479159
Link To Document :
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