DocumentCode
3544900
Title
Improved thermal conductivity by vertical graphene contact formation for thermal TSV
Author
Nihei, Mizuhisa ; Kawabata, Akio ; Murakami, Toshiyuki ; Sato, Mitsuhisa ; Yokoyama, Naoki
Author_Institution
Collaborative Res. Team Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear
2012
fDate
10-13 Dec. 2012
Abstract
This paper reports the tailoring thermal conductivity of novel dense vertical and horizontal graphene (DVHG) structures, which we previously discovered. By removing horizontal graphene layers, resulting in forming vertical graphene contacts to the electrode, we not only improved the thermal conductivity by a factor of 10 but also improved the electrical conductivity by a factor of 100. The pyrolytic graphite, grown at a higher temperature than the DVHG, showed a high thermal conductivity of 1426 W/mK by forming vertical graphene contacts. Although the DVHG showed poor thermal properties at this point, we found that the vertical graphene contact formation can be an important technology to realize high thermal conductivity for carbon-based thermal through-silicon-vias (TSV).
Keywords
graphene; thermal conductivity; thermal management (packaging); three-dimensional integrated circuits; DVHG structure; carbon-based thermal through-silicon-vias; dense vertical and horizontal graphene structure; electrical conductivity; electrode; horizontal graphene layer; pyrolytic graphite; thermal TSV; thermal conductivity; thermal properties; vertical graphene contact formation; Argon; Conductivity; Electrodes; Etching; Graphene; Resistance; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4673-4872-0
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2012.6479159
Filename
6479159
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