A novel oscillation circuit using a resonant-tunneling diode

Author

Muramatsu, Naokazu ; Okazaki, Hiroshi ; Waho, Takao

Author_Institution

Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan

fYear

2005

fDate

23-26 May 2005

Firstpage

2341

Abstract

A novel oscillation circuit using a resonant-tunneling diode (RTD) is proposed. The circuit has a simple configuration consisting of an RTD, a high-electron-mobility transistor (HEMT), and an inductor. A large oscillation swing that substantially exceeds the RTD negative differential resistance region can be obtained, since the oscillation is based on the RTD switching between the peak and valley states. To analyze the large-signal behavior, circuit simulation has been carried out. It was found that the oscillation frequency increases by increasing the RTD peak current density j_p or by decreasing the inductance L. A frequency as high as 180 GHz has been predicted when j_p=1×10⁵ A/cm² and L=0.1 nH.

Keywords

HEMT circuits; millimetre wave oscillators; resonant tunnelling diodes; 180 GHz; HEMT; RTD negative differential resistance region; RTD peak current density; RTD peak/valley switching states; high-electron-mobility transistor; inductor; oscillation circuit; resonant-tunneling diode; Circuit simulation; Current density; Diodes; Frequency; HEMTs; Inductance; Inductors; MODFETs; RLC circuits; Resonant tunneling devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on

Print_ISBN

0-7803-8834-8

Type

conf

DOI

10.1109/ISCAS.2005.1465094

Filename

1465094