DocumentCode :
3544919
Title :
Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals
Author :
Nogami, T. ; Penny, C. ; Madan, A. ; Parks, C. ; Li, Jie ; Flaitz, P. ; Uedono, Akira ; Chiang, S. ; He, Mengxun ; Simon, A. ; Bolom, T. ; Ryan, Tim ; Ito, Fumihiko ; Christiansen, C. ; Tai, Li-Heng ; Hu, C.-K. ; Kim, Heonhwan ; Zhang, Xiaobing ; Tanwar,
fYear :
2012
fDate :
10-13 Dec. 2012
Abstract :
Cu(Mn) alloy seed BEOL studies revealed fundamental insights into Mn segregation and EM enhancement. We found a metallic-state Mn-rich Cu layer under the MnOx layer at the Cu/SiCNH cap interface, and correlated this metallic layer with additional EM enhancement. A carbonyl-based CVD-Co liner film consumed Mn, reducing its segregation and EM benefit, suggesting O-free Co liner films are strategic for Cu-alloy seed extendibility.
Keywords :
chemical vapour deposition; copper alloys; electromigration; manganese alloys; BEOL; Cu(Mn) alloy seed interconnects; EM enhancement; carbonyl-based CVD-Co liner film; electromigration extendibility; Annealing; Doping; Films; Grain boundaries; Manganese; Plasmas;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2012.6479161
Filename :
6479161
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3544919
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