A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications

Author

Assefa, Solomon ; Shank, S. ; Green, W. ; Khater, M. ; Kiewra, Edward ; Reinholm, Carol ; Kamlapurkar, Swetha ; Rylyakov, A. ; Schow, Clint ; Horst, Folkert ; Huapu Pan ; Topuria, Teya ; Rice, P. ; Gill, Douglas M. ; Rosenberg, J. ; Barwicz, Tymon ; Min Y

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2012

fDate

10-13 Dec. 2012

Abstract

The first sub-100nm technology that allows the monolithic integration of optical modulators and germanium photodetectors as features into a current 90nm base high-performance logic technology node is demonstrated. The resulting 90nm CMOS-integrated Nano-Photonics technology node is optimized for analog functionality to yield power-efficient single-die multichannel wavelength-mulitplexed 25Gbps transceivers.

Keywords

CMOS integrated circuits; germanium; nanophotonics; optical modulation; optical transceivers; photodetectors; wavelength division multiplexing; CMOS integrated nanophotonics technology; WDM optical communications applications; bit rate 25 Gbit/s; germanium photodetectors; high-performance logic technology node; optical modulator monolithic integration; power-efficient single-die multichannel wavelength-mulitplexed transceivers; size 90 nm; High-speed optical techniques; Optical buffering; Optical device fabrication; Optical filters; Optical modulation; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4673-4872-0

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2012.6479162

Filename

6479162