Title :
Bias-Dependent Source Injection Resistance of Modified Schottky Barrier MOSFET
Author :
Tsui, Bing-Vue ; Lu, Chi-Pei ; Liu, Hsiao-Han
Author_Institution :
Department ofElectronics Engineering and Institute ofElectronics, National Chiao Tung University, Hsinchu, Taiwan, R. O. C.
Abstract :
Modified Schottky Barrier MOSFET with low resistance metal source/drain and good short channel effect immunity is one ofthe promising nano-scale device structures. In this work, a modified external load resistance method was proposed to extract the bias dependent source injection resistance of the MSB multi-gate MOSFET. The injection resistance is exponentially proportional to (VGS-Vth-O.5VDS) and would be close to the source/drain resistance of conventional MOSFET at high gate bias.
Keywords :
Annealing; Doping; Fabrication; Intrusion detection; Leakage current; MOSFET circuits; Nanoscale devices; Nanostructures; Schottky barriers; Silicides;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5419372
