DocumentCode :
3545192
Title :
Probabilistic computing with future deep sub-micrometer devices: a modelling approach
Author :
Hamid, H. ; Murray, Alan F. ; Laurenson, David ; Roy, Scott ; Cheng, Binjie
Author_Institution :
Dept. of Electron. & Electr. Eng., Edinburgh Univ., UK
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
2510
Abstract :
An approach is described that investigates the potential of probabilistic "neural" architectures for computation with deep sub-micrometer (DSM) MOSFETs. Initially, noisy MOSFET models are based upon those for a 0.35 μm MOS technology with an exaggerated 1/f characteristic. We explore the manifestation of the 1/f characteristic at the output of a 2-quadrant multiplier when the key n-channel MOSFETs are replaced by "noisy" MOSFETs. The stochastic behavior of this noisy multiplier has been mapped on to a software (Matlab) model of a continuous restricted Boltzmann machine (CRBM) - an analogue-input stochastic computing structure. Simulation of this DSM CRBM implementation shows little degradation from that of a "perfect" CRBM. This paper thus introduces a methodology for a form of "technology-downstreaming" and highlights the potential of probabilistic architectures for DSM computation.
Keywords :
1/f noise; Boltzmann machines; MOSFET; electronic engineering computing; inference mechanisms; mathematics computing; semiconductor device models; semiconductor device noise; stochastic processes; 0.35 micron; DSM CRBM simulation; DSM MOSFET; DSM computation; MOS technology; analogue-input stochastic computing structure; continuous restricted Boltzmann machine; deep sub-micrometer devices; exaggerated 1/f characteristic; modelling; noisy MOSFET models; noisy multiplier; probabilistic architectures; probabilistic computing; probabilistic neural architectures; software Matlab model; technology-downstreaming; two-quadrant multiplier output; Circuit noise; Computational modeling; Computer architecture; Degradation; Embedded computing; Low-frequency noise; MOSFETs; Mathematical model; Stochastic processes; Stochastic resonance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
Type :
conf
DOI :
10.1109/ISCAS.2005.1465136
Filename :
1465136
Link To Document :
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