• DocumentCode
    3545192
  • Title

    Probabilistic computing with future deep sub-micrometer devices: a modelling approach

  • Author

    Hamid, H. ; Murray, Alan F. ; Laurenson, David ; Roy, Scott ; Cheng, Binjie

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Edinburgh Univ., UK
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    2510
  • Abstract
    An approach is described that investigates the potential of probabilistic "neural" architectures for computation with deep sub-micrometer (DSM) MOSFETs. Initially, noisy MOSFET models are based upon those for a 0.35 μm MOS technology with an exaggerated 1/f characteristic. We explore the manifestation of the 1/f characteristic at the output of a 2-quadrant multiplier when the key n-channel MOSFETs are replaced by "noisy" MOSFETs. The stochastic behavior of this noisy multiplier has been mapped on to a software (Matlab) model of a continuous restricted Boltzmann machine (CRBM) - an analogue-input stochastic computing structure. Simulation of this DSM CRBM implementation shows little degradation from that of a "perfect" CRBM. This paper thus introduces a methodology for a form of "technology-downstreaming" and highlights the potential of probabilistic architectures for DSM computation.
  • Keywords
    1/f noise; Boltzmann machines; MOSFET; electronic engineering computing; inference mechanisms; mathematics computing; semiconductor device models; semiconductor device noise; stochastic processes; 0.35 micron; DSM CRBM simulation; DSM MOSFET; DSM computation; MOS technology; analogue-input stochastic computing structure; continuous restricted Boltzmann machine; deep sub-micrometer devices; exaggerated 1/f characteristic; modelling; noisy MOSFET models; noisy multiplier; probabilistic architectures; probabilistic computing; probabilistic neural architectures; software Matlab model; technology-downstreaming; two-quadrant multiplier output; Circuit noise; Computational modeling; Computer architecture; Degradation; Embedded computing; Low-frequency noise; MOSFETs; Mathematical model; Stochastic processes; Stochastic resonance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
  • Print_ISBN
    0-7803-8834-8
  • Type

    conf

  • DOI
    10.1109/ISCAS.2005.1465136
  • Filename
    1465136