Title :
Quantum capacitance: The deciding factor in nanometre regime for CNTFET
Author :
Sinha, Sanjeet Kumar ; Choudhury, Saurabh
Author_Institution :
Dept. of Electr. Eng., Nat. Inst. of Technol., Silchar, India
Abstract :
Carbon nanotube based FET devices are getting more and more importance today because of their high channel mobility and improved gate capacitance versus voltage characteristics. In this paper we compare and analyse the effect of gate capacitance on varying oxide thickness for silicon MOSTFET and CNTFET. It is seen that in nanometre regime quantum capacitance plays the major role in deciding the gate capacitance of a CNTFET and we find a favourable characteristics of decreasing gate capacitance with the decrease in the oxide thickness which is impossible to get in silicon MOSFET.
Keywords :
MOSFET; carbon nanotube field effect transistors; nanoelectronics; CNTFET; carbon nanotube based FET devices; deciding factor; high channel mobility; improved gate capacitance; nanometre regime; quantum capacitance; silicon MOSFET; voltage characteristics; CNTFETs; Capacitance; Insulators; Logic gates; MOSFET circuits; Manganese; CNTFET; MOSFET; inversion layer capacitance; oxide-thickness; quantum capacitance;
Conference_Titel :
Advanced Communication Control and Computing Technologies (ICACCCT), 2012 IEEE International Conference on
Conference_Location :
Ramanathapuram
Print_ISBN :
978-1-4673-2045-0
DOI :
10.1109/ICACCCT.2012.6320775
