Electro-optic effects in asymmetric coupled quantum wells

Author

Chen, Xia ; Bhatnagar, Amit ; Earnshaw, M.P. ; Batty, W. ; Allsopp, D.W.E.

Author_Institution

Dept. of Electron., York Univ., UK

fYear

1998

fDate

3-8 May 1998

Firstpage

414

Lastpage

415

Abstract

Summary form only given. We report a study of the electrooptic properties of a range of asymmetric coupled GaAs-AlGaAs QW (ACQWs) based on an accurate application of the excitonic Green´s-function (EGF) method. The basic ACQW structure comprises a shallow, wider AlGaAs well separated from a deep narrow GaAs well by a barrier that is sufficiently thin (typically 2 nm) to yield strong coupling between the two wells.

Keywords

Green´s function methods; III-V semiconductors; aluminium compounds; electro-optical effects; gallium arsenide; semiconductor quantum wells; symmetry; 2 nm; GaAs-AlGaAs; accurate application; asymmetric coupled GaAs-AlGaAs QW; asymmetric coupled quantum wells; barrier; basic ACQW structure; deep narrow GaAs well; electro-optic effects; electrooptic properties; excitonic Green´s-function method; shallow wider AlGaAs well; strong coupling; Dielectric thin films; Ferroelectric materials; MOSFET circuits; Optical films; Optical interconnections; Optical modulation; Optical refraction; Optical sensors; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676426

Filename

676426