Title :
Silicon bipolar linear power amplifier for WCDMA mobile applications
Author :
Carrara, Francesco ; Scuderi, A. ; Scuderi, A. ; Bottiglieri, G. ; Palmisano, G.
Author_Institution :
Facolta di Ingegneria, Catania Univ., Italy
Abstract :
A monolithic 1.9-GHz linear power amplifier for wideband code-division multiple access wireless transmitters was integrated using a low-cost pure-silicon bipolar process. At a 3.3-V supply voltage, the circuit exhibits a 31-dBm saturated output power, 57% maximum power-added efficiency, and 29-dBm output 1-dB compression point, while using a low quiescent current of 80 mA. Thanks to a linearizing bias network, the power amplifier is able to comply with the standard -33-dBc adjacent-channel leakage power ratio specification up to a 28.3-dBm output power level. The circuit also features temperature-stable RF gain as well as quiescent current control and shut-down functionalities.
Keywords :
UHF power amplifiers; bipolar analogue integrated circuits; code division multiple access; electric current; electric potential; integrated circuit design; linear network synthesis; linearisation techniques; mobile radio; radio transmitters; silicon; 1.9 GHz; 3.3 V; 80 mA; Si; WCDMA mobile applications; adjacent-channel leakage power ratio; linearizing bias network; power-added efficiency; quiescent current; saturated output power; shut-down functionality; silicon bipolar linear power amplifier; temperature-stable RF gain; wideband code-division multiple access wireless transmitters; Broadband amplifiers; Circuits; Multiaccess communication; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon; Transmitters; Voltage;
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
DOI :
10.1109/ISCAS.2005.1465178
