Title :
Dependence of breakdown voltage on drift length and linear doping gradients in SOI RESURF LDMOS devices
Author :
Yang, Shaoming ; Tseng, Wenchin ; Sheu, Gene
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan
Abstract :
An optimal variation in lateral doping profiles is proposed for the drift region of lateral power devices in partial SOI technology in order to achieve breakdown voltage above 200 V for both off-state and on-state operations. LDMOS structure incorporating the proposed optimal doping profile are analyzed for their electrical characteristics and compared with conventional uniformly doped partial SOI and thin layer SOI by extensive 2D numerical simulations using MEDICI. The results indicate that the proposed optimal doping profile is in good agreement with the optimal doping gradient for JI technology. The optimal doping profile can significantly improve the trade-off between breakdown voltage and specific on-resistance in comparison to uniformly doped P-SOI.
Keywords :
doping profiles; power MOSFET; semiconductor device breakdown; semiconductor device models; semiconductor doping; silicon-on-insulator; MEDICI; RESURF LDMOS device; SOI; breakdown voltage; drift length; drift region; extensive 2D numerical simulations; lateral doping profiles; lateral power devices; laterally diffused MOS device; linear doping gradients; off-state; on-state; optimal doping profile; reduced surface field LDMOS device; specific on-resistance; Asia; Computer science; Doping profiles; Electronic mail; Instruments; Length measurement; Power engineering and energy; Process design; Silicon on insulator technology; Voltage; Breakdown voltage; LDMOS; SOI; variation of lateral doping;
Conference_Titel :
Electronic Measurement & Instruments, 2009. ICEMI '09. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3863-1
Electronic_ISBN :
978-1-4244-3864-8
DOI :
10.1109/ICEMI.2009.5274655
