DocumentCode :
354569
Title :
Intensity dependence of the transparency current in InGaAsP semiconductor optical amplifiers
Author :
Kennedy, G.T. ; Roberts, P.D. ; Sibbett, W. ; Davies, D.A.O. ; Fisher, M.A. ; Adams, M.J.
Author_Institution :
J.F. Allen Phys. Res. Labs., Univ. of St. Andrews, Fife, UK
fYear :
1996
fDate :
2-7 June 1996
Firstpage :
11
Lastpage :
12
Abstract :
Summary form only given. Recently there has been considerable interest in ultrafast gain and refractive index nonlinearities in InGaAsP semiconductor amplifiers at wavelengths around 1.5 /spl mu/m. In particular, when an amplifier is biased at transparency such that a pulse propagating through it experiences no net gain or absorption, a large non-linearity having a recovery time of a few picoseconds has been measured. In this paper measurements of the transparency using the pump-probe method were compared to the optoelectronic signal method. Some discrepancies were observed and these are discussed together with the implications of the intensity-dependent transparency current for all-optical switching.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; self-induced transparency; semiconductor lasers; 1.5 micron; InGaAsP; all-optical switching; intensity dependence; optoelectronic signal; pump-probe measurement; refractive index nonlinearity; semiconductor optical amplifier; transparency current; ultrafast gain; Absorption; Gain measurement; Optical amplifiers; Optical propagation; Optical pulses; Pulse amplifiers; Pulse measurements; Refractive index; Semiconductor optical amplifiers; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
Type :
conf
Filename :
864298
Link To Document :
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