Optically-pumped mid-infrared VCSEL

Author

Bewley, W.W. ; Felix, C.L. ; Vurgaftman, I. ; Aifer, E.H. ; Meyer, J.R. ; Goldberg, L. ; Lindle, J.R.

Author_Institution

Opt. Sci. Div., Naval Res. Lab., Washington, DC, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

430

Lastpage

431

Abstract

Summary form only given. We report pulsed and continuous-wave operation of an optically-pumped III-V VCSEL emitting at /spl lambda//spl ap/2.9 /spl mu/m. The laser consists of a 12-1/2 period GaSb/AlAsSb distributed Bragg reflector (DBR) bottom mirror, a 79-period type-II W quantum well active region [InAs/GaSb/InAs/AlSb] and a dielectric DBR top mirror. The reflection plateaus of the top and bottom mirror are centered at /spl lambda/=3.0 /spl mu/m, and the top mirror is also optimized for >80% transmission at 1.064 /spl mu/m. The cavity containing the active region is nominally one wavelength long. The first results demonstrate the feasibility of diode-pumped mid-IR VCSELs with low thresholds at high temperatures.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; laser mirrors; optical pumping; quantum well lasers; surface emitting lasers; 2.9 micron; GaSb-AlAsSb; GaSb/AlAsSb DBR bottom mirror; III-V VCSEL; InAs-GaSb-InAs-AlSb; InAs/GaSb/InAs/AlSb quantum well; continuous-wave operation; dielectric DBR top mirror; diode-pumped; high temperatures; low thresholds; optically-pumped mid-infrared VCSEL; pulsed operation; quantum well active region; reflection plateaus; Dielectrics; Distributed Bragg reflectors; Gas lasers; III-V semiconductor materials; Mirrors; Optical pulses; Optical reflection; Quantum well lasers; Stimulated emission; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676457

Filename

676457