• DocumentCode
    3545705
  • Title

    Electron Energy Distribution Function measurements in a low pressure expanding plasma jet

  • Author

    Pessoa, R.S. ; Toneli, David ; Roberto, Marisa ; Petraconi, Gilberto ; Maciel, H.S.

  • Author_Institution
    Dept. de Fis., Inst. Tecnol. de Aeronaut., Sao José dos Campos, Brazil
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Streaming plasmas operating at low pressures can be viewed as high-current density, fully space-charge-compensated and charged particles (electrons, ions) sources. Because of these features, some applications as thin-film deposition, etching, ion nitriding and spectroscopic light sources are based on this discharge type. For a given application, it is desirable to control both the absolute and relative concentration of the active species (neutral particles and ions) in order to establish the best process conditions. The electron energy distribution function (EEDF) is closely associated with the rates of the major elementary processes, particle and power balance in the discharge, and it determines the global stability and operational properties of the plasma. Control of the EEDF is, thus, one of the major challenges in the application of chemically active plasmas in the microelectronic and other industries. Prediction of the evolution of the EEDF is crucial for fine-tuning the complex plasma.
  • Keywords
    Langmuir probes; argon; gas mixtures; least squares approximations; oxygen; plasma chemistry; plasma deposition; plasma jets; plasma sources; plasma temperature; space charge; sputter etching; Ar-O2; Druyvesteyn method; EEDF spatial evolution; Langmuir probe current-voltage characteristic; absolute concentration; active species; charged particle sources; chemically active plasmas; complex plasma fine-tuning; constrictive plasma source; current 0.5 A; dc power supply; discharge axis; discharge type; electron energy distribution function measurements; electron temperature population; elementary processes; etching; global stability; high-current density; ion nitriding; least-squares fitting method; low pressure expanding plasma jet; low pressure plasma jet discharge; microelectronic; mobile single Langmuir probe; neutral particles; nonMaxwellian plasma deflection; particle balance; plasma operational properties; power 10 W to 50 W; power balance; pressure 4 mtorr; reactive gas mixing; relative concentration; space-charge-compensated sources; spectroscopic light sources; streaming plasma; thin-film deposition; total pressure; two-temperature structure; voltage 3500 V; Discharges (electric); Distribution functions; Ions; Plasma measurements; Plasmas; Pressure measurement; Probes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science (ICOPS), 2013 Abstracts IEEE International Conference on
  • Conference_Location
    San Francisco, CA
  • ISSN
    0730-9244
  • Type

    conf

  • DOI
    10.1109/PLASMA.2013.6633366
  • Filename
    6633366