• DocumentCode
    3545734
  • Title

    Effective capacitance for gate delay with RC loads

  • Author

    Huang, Zhang-Cai ; Kurokawa, Atsushi ; Inoue, Yasuaki

  • Author_Institution
    Waseda Univ., Fukuoka, Japan
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    2795
  • Abstract
    In deep submicron designs, the resistance of interconnect plays a dominant role on the timing behavior of logic gates. The concept of effective capacitance Ceff is usually used to calculate the gate delay for interconnect loads. In this paper, a new method to derive the expression Ceff is presented, and the accuracy of the expression is discussed. In our approach, the output waveform is assumed as linear. Thus, the expression of effective capacitance is simple and efficient. Moreover, the result of effective capacitance is insensitive to output wave shape because Ceff is determined by the curve area. Therefore, it is appropriate for various output waveforms of a CMOS gate with RC loads. Experimental results show it is in agreement with the Spice simulation.
  • Keywords
    CMOS logic circuits; capacitance; integrated circuit interconnections; logic gates; timing; CMOS gate; RC loads; deep submicron designs; effective capacitance; gate delay; interconnect resistance; logic gates; timing behavior; Capacitance; Delay effects; Integrated circuit interconnections; Logic design; Logic gates; Semiconductor device modeling; Shape; Timing; Voltage; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
  • Print_ISBN
    0-7803-8834-8
  • Type

    conf

  • DOI
    10.1109/ISCAS.2005.1465207
  • Filename
    1465207