DocumentCode
3545734
Title
Effective capacitance for gate delay with RC loads
Author
Huang, Zhang-Cai ; Kurokawa, Atsushi ; Inoue, Yasuaki
Author_Institution
Waseda Univ., Fukuoka, Japan
fYear
2005
fDate
23-26 May 2005
Firstpage
2795
Abstract
In deep submicron designs, the resistance of interconnect plays a dominant role on the timing behavior of logic gates. The concept of effective capacitance Ceff is usually used to calculate the gate delay for interconnect loads. In this paper, a new method to derive the expression Ceff is presented, and the accuracy of the expression is discussed. In our approach, the output waveform is assumed as linear. Thus, the expression of effective capacitance is simple and efficient. Moreover, the result of effective capacitance is insensitive to output wave shape because Ceff is determined by the curve area. Therefore, it is appropriate for various output waveforms of a CMOS gate with RC loads. Experimental results show it is in agreement with the Spice simulation.
Keywords
CMOS logic circuits; capacitance; integrated circuit interconnections; logic gates; timing; CMOS gate; RC loads; deep submicron designs; effective capacitance; gate delay; interconnect resistance; logic gates; timing behavior; Capacitance; Delay effects; Integrated circuit interconnections; Logic design; Logic gates; Semiconductor device modeling; Shape; Timing; Voltage; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN
0-7803-8834-8
Type
conf
DOI
10.1109/ISCAS.2005.1465207
Filename
1465207
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