Title :
Modeling and analysis of Cdv/dt induced effects in power MOSFETs driving circuits
Author :
Xu, Shen ; Liu, Xia ; Sun, Weifeng
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Abstract :
Power MOSFETs are important devices in many instruments. Considering the main parasitic parameters, the Cdv/dt induced effects of power MOSFETs driving circuits are analyzed. These effects will deteriorate the performance of instruments. The switching operation process is discussed firstly. And then an analytical model is deduced, based on which the characteristics of Cdv/dt induced effects are simulated with different values of parasitic parameters. Finally, the design optimizations are presented, and a practical test board is used to validate the proposed approach.
Keywords :
MOSFET circuits; power MOSFET; semiconductor device models; Cdv/dt induced effects; parasitic parameters; power MOSFETs driving circuits; switching operation; Analytical models; Buck converters; Circuit testing; Driver circuits; Instruments; MOSFETs; Power measurement; Power system modeling; Switches; Threshold voltage; Cdv/dt; driving circuit; modeling; power MOSFET;
Conference_Titel :
Electronic Measurement & Instruments, 2009. ICEMI '09. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3863-1
Electronic_ISBN :
978-1-4244-3864-8
DOI :
10.1109/ICEMI.2009.5274667
