Picosecond four-wave mixing in GaN epilayers

Author

Fischer, Arthur J. ; Taheri, Behzad ; Hays, J. ; Song, Joshua J. ; Goldenberg, B.

Author_Institution

Center for Laser Res., Oklahoma State Univ., Stillwater, OK, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

16

Lastpage

17

Abstract

Summary form only given. Experiments were performed by picosecond four wave mixing on a 7 /spl mu/m-thick MOCVD-grown GaN epilayer using the second-harmonic of a modelocked, Q-switched Nd:YAG laser. In order to directly measure the total scattering efficiency, the boxcar geometry was used. The nonlinear refraction coefficient can then be determined from a relation.

Keywords

III-V semiconductors; gallium compounds; high-speed optical techniques; light scattering; measurement by laser beam; multiwave mixing; optical films; optical harmonic generation; optical materials; refractive index; semiconductor growth; vapour phase epitaxial growth; 7 mum; GaN; GaN epilayers; MOCVD-grown; YAG:Nd; YAl5O12:Nd; boxcar geometry; modelocked Q-switched Nd:YAG laser; nonlinear refraction coefficient; picosecond four-wave mixing; second-harmonic; total scattering efficiency; Birefringence; Four-wave mixing; Frequency; Gallium nitride; Holographic optical components; Holography; Nonlinear optics; Optical mixing; Optical refraction; Optical variables control;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864304