Title :
The study of nonlinear optical effects of GaN and AlGaN epitaxial films
Author :
Zhang, H.Y. ; He, X.H. ; Shih, Y.H. ; Schurman, Matthew ; Peng, Z.C. ; Stall, R.A.
Author_Institution :
Phys. Dept., Maryland Univ., Baltimore, MD, USA
Abstract :
Summary form only given. Here we report the study of nonlinear optical effects and waveguide modes of wide-bandgap and band-gap tunable semiconductor GaN and Al/sub x/Ga/sub 1-x/N epitaxial films. Low-pressure metalorganic vapor deposition (MOCVD) was used to grow epitaxial GaN and AlGaN layers on (0001) sapphire substrate. The UV absorbance spectra of a GaN film (with thickness 2.1 /spl mu/m) is shown.
Keywords :
aluminium compounds; gallium compounds; nonlinear optics; optical films; semiconductor growth; semiconductor thin films; substrates; tuning; ultraviolet spectra; vapour phase epitaxial growth; Aluminum gallium nitride; Gallium nitride; MOCVD; Nonlinear optics; Optical films; Optical waveguides; Photonic band gap; Semiconductor films; Semiconductor waveguides; Substrates;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
