DocumentCode :
3545853
Title :
Polarization-dependent saturation in semiconductor vertical-cavity lasers
Author :
Van Exter, M.P. ; Al-Remawi, A. ; Woerdman, J.P.
Author_Institution :
Huygens Lab., Leiden Univ., Netherlands
fYear :
1998
fDate :
3-8 May 1998
Firstpage :
445
Lastpage :
446
Abstract :
Summary form only given. The nominal cylindrical symmetry of most vertical-cavity surface-emitting lasers (VCSELs) makes their optical polarization both interesting and fragile. As a result, the actual polarization state is determined by various optical anisotropies, of which linear birefringence, created by stress/strain and internal electric fields, is generally the dominant one. We have now measured the much weaker nonlinear anisotropies in VCSELs, which originate from the polarization dependence of the saturation. The experiments were performed on standard proton-implanted AlGaAs quantum-well VCSELs operating at a wavelength of 850 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared sources; laser cavity resonators; laser transitions; light polarisation; optical saturation; quantum well lasers; surface emitting lasers; 850 nm; AlGaAs; VCSELs; actual polarization state; internal electric fields; linear birefringence; optical anisotropies; optical polarization; polarization dependence; polarization-dependent saturation; semiconductor vertical-cavity lasers; standard proton-implanted AlGaAs quantum-well VCSELs; stress/strain; vertical-cavity surface-emitting lasers; weaker nonlinear anisotropies; Anisotropic magnetoresistance; Birefringence; Geometrical optics; Nonlinear optics; Optical polarization; Optical saturation; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
Type :
conf
DOI :
10.1109/CLEO.1998.676477
Filename :
676477
Link To Document :
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