Title :
Size dependence of selectively oxidized VCSEL transverse-mode structure
Author :
Hegarty, S.P. ; Huyet, G. ; McInerney, J.G. ; Choquette, Kent D. ; Hou, H.Q. ; Geib, Kent M.
Author_Institution :
Dept. of Phys., Univ. Coll. Cork, Ireland
Abstract :
Summary form only given. We report the spectral and modal properties of small (0.5- to 5-/spl mu/m current aperture) VCSELs and identify Joule heating as a dominant effect in the resonator properties of the smallest lasers. The lasers studied here were AlGaAs structures with semiconductor distributed Bragg reflectors (DBRs), where the selectively oxidized confinement layer is pulled back three mirror periods from each side of the active region to produce a lateral effective index difference of 0.05.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser mirrors; refractive index; semiconductor lasers; surface emitting lasers; 0.5 mum; 1.5 mum; 5 mum; AlGaAs; AlGaAs structures; DBR lasers; Joule heating; VCSELs; active region; current aperture; lateral effective index difference; modal properties; resonator properties; selectively oxidized VCSEL transverse-mode structure; selectively oxidized confinement layer; semiconductor distributed Bragg reflectors; size dependence; spectral properties; three mirror periods; Bandwidth; Data communication; Distributed Bragg reflectors; Etching; Gallium arsenide; Indium gallium arsenide; Quantum well lasers; Signal analysis; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676480
