Full working condition thermal reliability analysis for 3D-integrated photo-mos SSR package

The temperature and thermal stress distribution are significant to investigate the thermal properties of micro-electronic devices. This paper illustrates the 3-D finite element thermal analysis on a photo-MOS SSR package (solid state relay) using software ANSYS9.0. Full working conditions including long conduction time, load changing and on and off shift are simulated using the built finite element computation model. The results indicate that large thermal stress intensively appears at the border of different layers and the corner of package. It suggests that material property and boundary condition are the main factors to determine the thermal stress distribution of the electronic photo-MOS SSR packages. This achievements supplies theoretical foundation for the heat transfer and stress researches in other fields.