Title :
Carrier confinement in InGa(Al)As tunnel-coupled quantum dot light emitters based on ultrasmall apertures
Author :
Huffaker, D.L. ; Graham, L.A. ; Deppe, Dennis G.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Summary form only given. We illustrate the QD LED structure and show atomic force microscope (AFM) images for two different QD samples. The first QD sample has a single layer InGaAlAs QD active region formed from a six-monolayer deposition. The second sample has a vertically stacked QD emitting region made from depositions of five, four, and four monolayers separated by GaAs barriers.
Keywords :
III-V semiconductors; aluminium compounds; atomic force microscopy; gallium arsenide; indium compounds; light emitting diodes; monolayers; optical films; semiconductor quantum dots; semiconductor superlattices; tunnelling; InGaAlAs; InGaAlAs tunnel-coupled quantum dot light emitters; QD LED structure; atomic force microscope images; carrier confinement; monolayers; single layer InGaAlAs QD active region; six-monolayer deposition; ultrasmall apertures; vertically stacked QD emitting region; Carrier confinement; Laser modes; Light emitting diodes; Mirrors; Optimized production technology; Quantum dots; Resonance; Surface emitting lasers; US Department of Transportation; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676504
