Carrier confinement in InGa(Al)As tunnel-coupled quantum dot light emitters based on ultrasmall apertures

Author

Huffaker, D.L. ; Graham, L.A. ; Deppe, Dennis G.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

466

Lastpage

467

Abstract

Summary form only given. We illustrate the QD LED structure and show atomic force microscope (AFM) images for two different QD samples. The first QD sample has a single layer InGaAlAs QD active region formed from a six-monolayer deposition. The second sample has a vertically stacked QD emitting region made from depositions of five, four, and four monolayers separated by GaAs barriers.

Keywords

III-V semiconductors; aluminium compounds; atomic force microscopy; gallium arsenide; indium compounds; light emitting diodes; monolayers; optical films; semiconductor quantum dots; semiconductor superlattices; tunnelling; InGaAlAs; InGaAlAs tunnel-coupled quantum dot light emitters; QD LED structure; atomic force microscope images; carrier confinement; monolayers; single layer InGaAlAs QD active region; six-monolayer deposition; ultrasmall apertures; vertically stacked QD emitting region; Carrier confinement; Laser modes; Light emitting diodes; Mirrors; Optimized production technology; Quantum dots; Resonance; Surface emitting lasers; US Department of Transportation; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676504

Filename

676504