Title :
Demonstration of a nonreciprocal multiple-quantum-well structure leading to unidirectional operation of a ring laser
Author :
Pulaski, P. ; Diels, J.-C.
Author_Institution :
Dept. of Phys. & Astron., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Summary form only given. We designed a GaAs-AlGaAs MQW ring laser structure that had a zero reflectivity for a beam incident from one side and a nonzero reflectivity (5%) from the other side at a particular value of gain in the quantum wells. Such a structure was grown on a GaAs substrate by molecular beam epitaxy (MBE).
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; optical design techniques; optical fabrication; quantum well lasers; reflectivity; ring lasers; semiconductor growth; GaAs; GaAs substrate; GaAs-AlGaAs; GaAs-AlGaAs MQW ring laser structure design; MBE; QW laser gain; molecular beam epitaxy; nonreciprocal multiple-quantum-well structure; nonzero reflectivity; unidirectional ring laser operation; zero reflectivity; Dielectrics; Laser excitation; Laser theory; Molecular beam epitaxial growth; Optical reflection; Quantum well devices; Reflectivity; Ring lasers; Substrates; Wet etching;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676507
