Title :
High-speed modulation of strain compensated modulation-doped InGaAs-GaAsP-InGaP multiple quantum well lasers
Author :
Han, Nan ; Freeman, P.N. ; Hobson, W.S. ; Dutta, N.K. ; Lopata, J. ; Chu, S.N.G.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Summary form only given. Strained-layer multiple quantum well structures have been used to obtain wide bandwidth modulation of semiconductor lasers due to their enhancement of differential gain over unstrained single QW structures. In this work we report the high-speed direct modulation of strain-compensated modulation-doped MQW InGaAs-GaAsP-InGaP lasers.
Keywords :
III-V semiconductors; compensation; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor doping; InGaAs-GaAsP-InGaP; InGaAs-GaAsP-InGaP MQW lasers; differential gain; high-speed direct modulation; high-speed modulation; modulation-doped; semiconductor lasers; strain compensated modulation-doped multiple quantum well lasers; strain-compensated; unstrained single QW structures; wide bandwidth modulation; Bandwidth; Capacitive sensors; Electrons; Epitaxial layers; Laser modes; Optimized production technology; Quantum well devices; Quantum well lasers; Semiconductor lasers; Solid lasers;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
