High-speed modulation of strain compensated modulation-doped InGaAs-GaAsP-InGaP multiple quantum well lasers

Author

Han, Nan ; Freeman, P.N. ; Hobson, W.S. ; Dutta, N.K. ; Lopata, J. ; Chu, S.N.G.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

44

Lastpage

45

Abstract

Summary form only given. Strained-layer multiple quantum well structures have been used to obtain wide bandwidth modulation of semiconductor lasers due to their enhancement of differential gain over unstrained single QW structures. In this work we report the high-speed direct modulation of strain-compensated modulation-doped MQW InGaAs-GaAsP-InGaP lasers.

Keywords

III-V semiconductors; compensation; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor doping; InGaAs-GaAsP-InGaP; InGaAs-GaAsP-InGaP MQW lasers; differential gain; high-speed direct modulation; high-speed modulation; modulation-doped; semiconductor lasers; strain compensated modulation-doped multiple quantum well lasers; strain-compensated; unstrained single QW structures; wide bandwidth modulation; Bandwidth; Capacitive sensors; Electrons; Epitaxial layers; Laser modes; Optimized production technology; Quantum well devices; Quantum well lasers; Semiconductor lasers; Solid lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864337