Accurate high frequency noise modeling in SiGe HBTs

Author

Selim, Mohamed A. ; Salama, Aly E.

Author_Institution

Device Modeling, Mentor Graphics, Cairo, Egypt

fYear

2005

fDate

23-26 May 2005

Firstpage

3011

Abstract

A new extension to account for correlation between the shot noise sources of SiGe HBTs is formulated. This model is valid to be added to existing compact models. Using this model, circuit level noise parameters, including the minimum noise figure, the optimum generator admittance and the noise resistance, are calculated from noise sources and the small signal y-parameters of the transistor through circuit analysis of the chain noisy two-port representation. The minimum noise figure simulated was found to be less than the original model without correlation ranging from -23% at 2 GHz to -6% at 26 GHz, giving a better fit to measured data.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; network analysis; semiconductor device models; semiconductor device noise; shot noise; 2 to 26 GHz; SiGe; SiGe HBT; chain noisy two-port representation; circuit analysis; circuit level noise parameters; generator admittance; high frequency noise modeling; noise figure; noise resistance; shot noise sources; silicon-germanium HBT; small signal y-parameters; Admittance; Circuit analysis; Circuit noise; Frequency; Germanium silicon alloys; Noise figure; Noise generators; Noise level; Signal generators; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on

Print_ISBN

0-7803-8834-8

Type

conf

DOI

10.1109/ISCAS.2005.1465261

Filename

1465261