Carrier dynamics in narrow-band-gap quantum wells measured with subpicosecond mid-wave infrared pulses

Author

McCahon, S.W. ; Anson, S.A. ; Jang, D.J. ; Olesberg, Jonathon T. ; Flatte, M.E. ; Boggess, T.F. ; Chow, D.H. ; Hasenberg, T.C. ; Grein, C.H.

Author_Institution

Dept. of Phys. & Astron., Iowa Univ., Iowa City, IA, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

50

Abstract

Summary form only given. We describe time-resolved differential transmission measurements of carrier recombination cooling and transport in multiple quantum well structures composed of GaInSb/InAs superlattice wells with AlGaSb barriers. This and similar structures are currently of interest as the active region in 3-4 /spl mu/m diode lasers. Measurements were performed at room temperature using 140 fs pump pulses from a mode-locked Ti:sapphire laser operating at 830 nm and at a repetition rate of 76 MHz and 170-fs probe pulses from a synchronously-pumped optical parametric oscillator operating at 3.55 /spl mu/m.

Keywords

III-V semiconductors; electron-hole recombination; gallium compounds; high-speed optical techniques; indium compounds; narrow band gap semiconductors; semiconductor quantum wells; 140 fs; 170 fs; 3.55 micron; 76 Hz; 830 nm; AlGaSb; AlGaSb barriers; GaInSb-InAs; GaInSb/InAs superlattice; carrier dynamics; carrier recombination cooling; carrier transport; narrow-band-gap multiple quantum well; subpicosecond mid-wave infrared pulses; time-resolved differential transmission; Cooling; Diode lasers; Gain measurement; Laser excitation; Optical pulses; Performance evaluation; Pulse measurements; Radiative recombination; Superlattices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864344