Title :
A silicon nitride optomechanical oscillator with zero flicker noise
Author :
Tallur, S. ; Sridaran, S. ; Bhave, S.A.
Author_Institution :
OxideMEMS Lab., Cornell Univ., Ithaca, NY, USA
fDate :
Jan. 29 2012-Feb. 2 2012
Abstract :
We present an integrated chip-scale Radiation-Pressure driven Opto-Mechanical Oscillator (RP-OMO) in silicon nitride with excellent close-to-carrier phase noise. We illustrate a process to micro-fabricate optomechanical resonators, waveguides and grating couplers in silicon nitride and demonstrate an RP-OMO operating at 41.95MHz, with phase noise of -85dBc/Hz at 1kHz offset. The phase noise does not show 1/f3 or other higher order slopes all the way down to 10Hz offset from carrier. Using a lower optical quality factor resonance, we demonstrate improvement of 6dB in phase noise.
Keywords :
crystal oscillators; crystal resonators; flicker noise; microfabrication; phase noise; radiation pressure; silicon compounds; waveguide couplers; SiN; close-to-carrier phase noise; frequency 1 kHz; frequency 41.95 MHz; grating couplers; integrated chip-scale radiation-pressure driven opto-mechanical oscillator; microfabricated optomechanical resonators; optical quality factor resonance; phase noise; silicon nitride optomechanical oscillator; waveguides; zero flicker noise; Optical coupling; Optical device fabrication; Optical pumping; Optical resonators; Optical waveguides; Phase noise;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-0324-8
DOI :
10.1109/MEMSYS.2012.6170083
