Title :
III-V nitride-based blue laser diodes with quantum well structures
Author :
Nakamura, Shigenari
Author_Institution :
R&D Dept., Nichia Chem. Ind. Ltd., Tokushima, Japan
Abstract :
Summary form only given. At present the main focus of III-V nitride research is the realization of a current-injected laser diode, which is expected to be the shortest-wavelength semiconductor laser diode ever demonstrated. However, stimulated emission has been observed only by optical pumping, and not by current injection. In this paper, we present the laser diodes fabricated using wide-band-gap III-V nitride materials.
Keywords :
III-V semiconductors; quantum well lasers; stimulated emission; wide band gap semiconductors; blue laser; current injection; quantum well structure; semiconductor laser diode; stimulated emission; wide-band-gap III-V nitride; Diode lasers; Gallium nitride; III-V semiconductor materials; Optical pumping; Pulse measurements; Quantum well devices; Quantum well lasers; Space vector pulse width modulation; Stimulated emission; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
