DocumentCode :
3546381
Title :
An 18 GHz low noise high linearity active mixer in SiGe
Author :
Wang, Yanxin ; Duster, Jon S. ; Kornegay, Kevin T. ; Park, Hyun-Min ; Laskar, Joy
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
3243
Abstract :
In this paper, the design and measured results of an active double-balanced direct down-conversion mixer at 18 GHz is presented. The mixer, which is fabricated in IBM´s 45-GHz ft SiGe BiCMOS process achieves a 4.5 dB conversion gain, a 7.1 dB double sideband noise figure, an IIP3 of -1 dBm, an IIP2 of 20.3 dBm, and a l-dB compression point at 12.2 dBm output power. The mixer DC power consumption is 16.5 mW with a 3.3 V supply. To the authors´ knowledge, the design achieves the highest figure of merit among published direct down-conversion mixers operating at similar frequencies in comparable Si-based process.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; microwave frequency convertors; microwave mixers; 16.5 mW; 18 GHz; 3.3 V; 45 GHz; Ge-Si; SiGe; SiGe BiCMOS process; double sideband noise figure; double-balanced direct down-conversion mixer; figure of merit; high linearity active mixer; low noise active mixer; Active noise reduction; BiCMOS integrated circuits; Energy consumption; Gain; Germanium silicon alloys; Linearity; Mixers; Noise figure; Power generation; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
Type :
conf
DOI :
10.1109/ISCAS.2005.1465319
Filename :
1465319
Link To Document :
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