• DocumentCode
    3546381
  • Title

    An 18 GHz low noise high linearity active mixer in SiGe

  • Author

    Wang, Yanxin ; Duster, Jon S. ; Kornegay, Kevin T. ; Park, Hyun-Min ; Laskar, Joy

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    3243
  • Abstract
    In this paper, the design and measured results of an active double-balanced direct down-conversion mixer at 18 GHz is presented. The mixer, which is fabricated in IBM´s 45-GHz ft SiGe BiCMOS process achieves a 4.5 dB conversion gain, a 7.1 dB double sideband noise figure, an IIP3 of -1 dBm, an IIP2 of 20.3 dBm, and a l-dB compression point at 12.2 dBm output power. The mixer DC power consumption is 16.5 mW with a 3.3 V supply. To the authors´ knowledge, the design achieves the highest figure of merit among published direct down-conversion mixers operating at similar frequencies in comparable Si-based process.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; microwave frequency convertors; microwave mixers; 16.5 mW; 18 GHz; 3.3 V; 45 GHz; Ge-Si; SiGe; SiGe BiCMOS process; double sideband noise figure; double-balanced direct down-conversion mixer; figure of merit; high linearity active mixer; low noise active mixer; Active noise reduction; BiCMOS integrated circuits; Energy consumption; Gain; Germanium silicon alloys; Linearity; Mixers; Noise figure; Power generation; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
  • Print_ISBN
    0-7803-8834-8
  • Type

    conf

  • DOI
    10.1109/ISCAS.2005.1465319
  • Filename
    1465319