Title :
Silica-based planar optical waveguide devices by TEOS/O/sub 3/ APCVD method
Author :
Kitamura, Masayuki ; Kitamura, N. ; Itoh, M.
Author_Institution :
Opto-Electron. & High Frequency Device Res. Labs., NEC Corp., Kawasaki, Japan
Abstract :
Summary form only given. We demonstrate that, with our tetraethoxysilane (TEOS)/O/sub 3/ atmospheric pressure (AP) CVD method, metal materials for etching masks and electrical wiring can be formed directly on Si before silica film deposition, which makes this method extremely attractive for highly functional hybrid-integrated optical modules. Hybrid-integrated optical transceivers and SOA gate matrix switches have been demonstrated with this method.
Keywords :
chemical vapour deposition; etching; integrated optoelectronics; modules; optical fabrication; optical planar waveguides; optical receivers; optical transmitters; semiconductor lasers; silicon compounds; transceivers; O/sub 3/; SOA gate matrix switches; TEOS/O/sub 3/ APCVD method; atmospheric pressure CVD method; electrical wiring; etching masks; highly functional hybrid-integrated optical modules; hybrid-integrated optical transceivers; metal materials; silica film deposition; silica-based planar optical waveguide devices; tetraethoxysilane; Atmospheric waves; Etching; Inorganic materials; Optical devices; Optical films; Optical materials; Optical planar waveguides; Optical waveguides; Planar waveguides; Wiring;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676523
