DocumentCode
3546426
Title
A DRIE compensation mask pattern for fabricating an extremely thick comb electrode
Author
Hata, Y. ; Nonomura, Y. ; Akashi, T. ; Funabashi, H. ; Fujiyoshi, M. ; Omura, Y.
Author_Institution
Toyota Central R&D Labs., Inc., Nagakute, Japan
fYear
2012
fDate
Jan. 29 2012-Feb. 2 2012
Firstpage
208
Lastpage
211
Abstract
This paper reports a novel DRIE compensation mask pattern for fabricating an extremely thick sense-comb structure. When we attempted to fabricate a 300-μm-thick sense-comb structure to improve the sensitivity of a capacitive sensor, we found that a bridge-shaped silicon residue (bridge) prevented its formation. We first investigated the detailed property and where the bridge appeared by the DRIE. Based on these investigations, we propose a DRIE compensation pattern to remove the bridge. We successfully formed a 300-μm-thick sense-comb structure by adding the compensation pattern to a tip of the comb structure. Experimental results demonstrated the effectiveness of the proposed compensation pattern.
Keywords
aluminium; capacitive sensors; copper; electrodes; masks; silicon; sputter etching; Al-Si-Cu; DRIE compensation mask pattern; bridge shaped silicon residue; capacitive sensor; deep reactive ion etching; extremely thick comb electrode fabrication; size 300 mum; thick sense comb structure; Bridge circuits; Bridges; Electrodes; Etching; Ions; Passivation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location
Paris
ISSN
1084-6999
Print_ISBN
978-1-4673-0324-8
Type
conf
DOI
10.1109/MEMSYS.2012.6170127
Filename
6170127
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