• DocumentCode
    3546426
  • Title

    A DRIE compensation mask pattern for fabricating an extremely thick comb electrode

  • Author

    Hata, Y. ; Nonomura, Y. ; Akashi, T. ; Funabashi, H. ; Fujiyoshi, M. ; Omura, Y.

  • Author_Institution
    Toyota Central R&D Labs., Inc., Nagakute, Japan
  • fYear
    2012
  • fDate
    Jan. 29 2012-Feb. 2 2012
  • Firstpage
    208
  • Lastpage
    211
  • Abstract
    This paper reports a novel DRIE compensation mask pattern for fabricating an extremely thick sense-comb structure. When we attempted to fabricate a 300-μm-thick sense-comb structure to improve the sensitivity of a capacitive sensor, we found that a bridge-shaped silicon residue (bridge) prevented its formation. We first investigated the detailed property and where the bridge appeared by the DRIE. Based on these investigations, we propose a DRIE compensation pattern to remove the bridge. We successfully formed a 300-μm-thick sense-comb structure by adding the compensation pattern to a tip of the comb structure. Experimental results demonstrated the effectiveness of the proposed compensation pattern.
  • Keywords
    aluminium; capacitive sensors; copper; electrodes; masks; silicon; sputter etching; Al-Si-Cu; DRIE compensation mask pattern; bridge shaped silicon residue; capacitive sensor; deep reactive ion etching; extremely thick comb electrode fabrication; size 300 mum; thick sense comb structure; Bridge circuits; Bridges; Electrodes; Etching; Ions; Passivation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
  • Conference_Location
    Paris
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-0324-8
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2012.6170127
  • Filename
    6170127