Title :
Self-assembled nano-electro-mechanical tri-state carbon nanotube switches for reconfigurable integrated circuits
Author :
Cao, J. ; Vitale, W.A. ; Ionescu, A.M.
Author_Institution :
Nanolab, Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
fDate :
Jan. 29 2012-Feb. 2 2012
Abstract :
We report, for the first time, self-assembled cantilever and clamped-clamped tri-state carbon nanotube (T-CNT) nano-electro-mechanical (NEM) switches with sub-100 nm air-gap dual lateral gates. Unlike conventional bi-state CNT switches, the T-CNT NEM switches operate in three states: CNT in the center (OFF), CNT attracted to the left gate (ON-1) or to the right gate (ON-2). They demonstrate excellent sensing current windows (Ion/Ioff~107), ultra-low Ioff (~10-14 A), good isolation and high endurance (cycle>;102). The proposed hysteretic switches offer a complementary metal-oxide-semiconductor (CMOS)-compatible bottom-up approach for various potential applications: logic devices, memories, etc., with higher circuit density and novel ultra-scaled configurability functions.
Keywords :
CMOS integrated circuits; CMOS logic circuits; CMOS memory circuits; cantilevers; carbon nanotubes; clamps; microswitches; nanoelectromechanical devices; self-assembly; CMOS-compatible bottom-up approach; T-CNT NEM switches; T-CNT nano-electro-mechanical switches; air-gap dual lateral gates; circuit density; clamped-clamped tri-state carbon nanotube; complementary metal-oxide-semiconductor; conventional bi-state CNT switches; hysteretic switches; logic devices; logic memory; reconfigurable integrated circuits; self-assembled cantilever; self-assembled nano-electro-mechanical tri-state carbon nanotube switches; sensing current windows; ultra-scaled configurability functions; Assembly; Carbon nanotubes; Electrodes; Electrostatics; Logic gates; Switches; Voltage measurement;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-0324-8
DOI :
10.1109/MEMSYS.2012.6170148