Title :
850-nm antiguided laser array fabricated using a zinc disordered superlattice
Author :
Gray, J.M. ; Marsh, John H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
Summary form only given. We have demonstrated a novel method for fabricating of high-power antiguided array lasers in the GaAs-AlGaAs system which eliminates the need for overgrowth. We believe these are the first antiguided array lasers fabricated using a superlattice.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared sources; laser transitions; optical fabrication; quantum well lasers; semiconductor laser arrays; semiconductor superlattices; waveguide lasers; 850 nm; GaAs-AlGaAs; GaAs-AlGaAs system; antiguided laser array fabrication; high-power antiguided array lasers; superlattice; zinc disordered superlattice; Gallium arsenide; Laser modes; Metallic superlattices; Optical arrays; Optical coupling; Phased arrays; Power lasers; Refractive index; Semiconductor laser arrays; Zinc;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
