ZnSe-facet-passivated InGaAs/InGaAsP/InGaP diode lasers of high cw power and "wallplug" efficiency

Author

Syrbu, A.V. ; Yakovlev, V.P. ; Suruceanu, G.I. ; Mereutza, A.Z. ; Mawst, L.J. ; Bhattacharya, Avik ; Nesnidal, M. ; Lopez, J. ; Boetz, D.

Author_Institution

Tech. Univ. of Moldova, Chisinau, Moldova

fYear

1996

fDate

2-7 June 1996

Firstpage

78

Lastpage

79

Abstract

Summary form only given. We report on the cw performance of optimized facet-coated InGaAs/InGaAsP/InGaP (/spl lambda/=0.95 /spl mu/m) diode lasers as well as on the improvement in their performance as the facets are passivated by in-situ growth of ZnSe half-wave films. The results represent record-high values for both front-facet-emitted cw power: 2.9 W, as well as maximum cw wallplug efficiency: 54%.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; passivation; semiconductor lasers; zinc compounds; 0.95 micron; 2.9 W; 54 percent; InGaAs-InGaAsP-InGaP; InGaAs/InGaAsP/InGaP diode laser; ZnSe; ZnSe half-wave film; facet passivation; front-facet-emitted CW power; wallplug efficiency; Diode lasers; Gallium arsenide; Indium gallium arsenide; Optical arrays; Power generation; Power lasers; Refractive index; Semiconductor laser arrays; Threshold current; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864384