4 Watt, high efficient, 0.81-/spl mu/m SQW GRIN-SCH AlGaAs/GaAs laser diodes with broadened waveguide

Author

Garbuzov, D.Z. ; Abeles, J.H. ; Morris, N.A. ; Connolly, J.C.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

79

Lastpage

80

Abstract

Summary form only given. The advantages of broad waveguide AlGaAs/GaAs SQW GRIN-SCH lasers for high-power operation are reported. The results show that the broadened-waveguide QW lasers are more suitable for high-power operation than lasers with conventional waveguide thickness and that the design of waveguides in the case of high-power laser diodes should be directed towards reducing both the optical losses and expanding the near-field pattern.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; quantum well lasers; waveguide lasers; 0.81 micron; 4 W; AlGaAs-GaAs; SQW GRIN-SCH AlGaAs/GaAs laser diode; broadened waveguide; high-power operation; near-field pattern; optical losses; Diode lasers; Electron optics; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical waveguides; Power conversion; Power generation; Voltage; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864385