High-power 1.5-/spl mu/m broad-area laser diodes

Author

Zhao, Hang ; Mathur, Abhisek ; Welch, David

Author_Institution

SDL Inc., San Jose, CA, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

81

Lastpage

82

Abstract

Summary form only given. High-power laser diodes with wavelengths ranging in wavelength from 1.5 to 2.0 /spl mu/m have many applications. Included in these applications are measurement systems. Within this talk data will be presented on high-power broad-area 1.55 /spl mu/m laser diodes that may be used for many of these applications. These data include cw output powers approaching 3 W from a single broad-area laser diode. The structure is grown by metal-organic chemical vapor deposition (MOCVD) and has a strained InGaAsP multiple quantum well active region.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser beam applications; laser transitions; optical fabrication; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 1.5 mum; 1.55 mum; 3 W; InGaAsP; MOCVD; cw output powers; high-power 1.5-/spl mu/m broad-area laser diodes; measurement systems; metal-organic chemical vapor deposition; single broad-area laser diode; strained InGaAsP multiple quantum well active region; Bragg gratings; Diode lasers; Fiber gratings; Fiber lasers; Optical coupling; Optical films; Optical waveguides; Reflectivity; Stability; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864387