C-V characterization of the piezocapacitive effect with a microfabricated cantilever

Author

Huang, Jian-Qiu ; Qin, Ming ; Huang, Qing-An

Author_Institution

Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China

fYear

2012

fDate

Jan. 29 2012-Feb. 2 2012

Firstpage

400

Lastpage

403

Abstract

The piezocapacitve effect of an n-type MOS capacitor is experimentally studied with a micro-fabricated cantilever. It shows that besides the geometrical effect, the stress induced dielectric constant change also contributes to the piezocapacitive behavior. To evaluate the stress effect on the dielectric constant of the thermal SiO₂, an improved analytical model is developed and capacitance-voltage (C-V) measurements are used to investigate the dielectric constant changes in detail. The stress effect on the dielectric constant was characterized by the dielectrostriction coefficient M₁₂. According to the measurements, the dielectrostriction coefficient M₁₂ of the thermal SiO₂ is -(0.21±0.01)×10^-21 m²/V².

Keywords

MOS capacitors; cantilevers; microfabrication; permittivity; piezoelectricity; silicon compounds; C-V characterization; SiO₂; capacitance-voltage measurements; dielectrostriction coefficient; geometrical effect; microfabricated cantilever; n-type MOS capacitor; piezocapacitive behavior; piezocapacitive effect; stress effect; stress-induced dielectric constant change; thermal silicon dioxide; Capacitance; Capacitance-voltage characteristics; Capacitors; Dielectric constant; Semiconductor device measurement; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on

Conference_Location

Paris

ISSN

1084-6999

Print_ISBN

978-1-4673-0324-8

Type

conf

DOI

10.1109/MEMSYS.2012.6170164

Filename

6170164