• DocumentCode
    3546583
  • Title

    Identification of fatigue crack extension process in zero-tension cyclic stress test of polysilicon films

  • Author

    Le Huy, Vu ; Kamiya, Shoji ; Gaspar, Joao ; Paul, Oliver

  • Author_Institution
    Nagoya Inst. of Technol., Nagoya, Japan
  • fYear
    2012
  • fDate
    Jan. 29 2012-Feb. 2 2012
  • Firstpage
    440
  • Lastpage
    443
  • Abstract
    This paper presents evidence for a fatigue crack extension process in zero-tension cyclic stress test of polysilicon film specimens with notches. Initial cracks and their fatigue extension were found on the fracture surfaces observed in a scanning electron microscope. The fatigue crack extension process was quantitatively analyzed in detail using Paris´ law on the basis of the parameters evaluated from static and fatigue test data. The observed and estimated crack lengths are consistent with each other. The results suggest that the fatigue crack extend into the silicon itself.
  • Keywords
    elemental semiconductors; fatigue cracks; fatigue testing; scanning electron microscopy; semiconductor thin films; silicon; statistical testing; Paris law; Si; crack lengths; fatigue crack extension process; fracture surfaces; polysilicon films; scanning electron microscopy; static test data; zero-tension cyclic stress test; Equations; Fatigue; Mathematical model; Silicon; Stress; Surface cracks; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
  • Conference_Location
    Paris
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4673-0324-8
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2012.6170168
  • Filename
    6170168