DocumentCode
3546583
Title
Identification of fatigue crack extension process in zero-tension cyclic stress test of polysilicon films
Author
Le Huy, Vu ; Kamiya, Shoji ; Gaspar, Joao ; Paul, Oliver
Author_Institution
Nagoya Inst. of Technol., Nagoya, Japan
fYear
2012
fDate
Jan. 29 2012-Feb. 2 2012
Firstpage
440
Lastpage
443
Abstract
This paper presents evidence for a fatigue crack extension process in zero-tension cyclic stress test of polysilicon film specimens with notches. Initial cracks and their fatigue extension were found on the fracture surfaces observed in a scanning electron microscope. The fatigue crack extension process was quantitatively analyzed in detail using Paris´ law on the basis of the parameters evaluated from static and fatigue test data. The observed and estimated crack lengths are consistent with each other. The results suggest that the fatigue crack extend into the silicon itself.
Keywords
elemental semiconductors; fatigue cracks; fatigue testing; scanning electron microscopy; semiconductor thin films; silicon; statistical testing; Paris law; Si; crack lengths; fatigue crack extension process; fracture surfaces; polysilicon films; scanning electron microscopy; static test data; zero-tension cyclic stress test; Equations; Fatigue; Mathematical model; Silicon; Stress; Surface cracks; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location
Paris
ISSN
1084-6999
Print_ISBN
978-1-4673-0324-8
Type
conf
DOI
10.1109/MEMSYS.2012.6170168
Filename
6170168
Link To Document