Title :
A simple technique to determine the anisotropy of Young´s modulus of single crystal silicon using coupled micro-cantilevers
Author :
Boyd, E.J. ; Choubey, B. ; Armstrong, I. ; Uttamchandani, D.
Author_Institution :
Centre for Microsyst. & Photonics, Univ. of Strathclyde, Glasgow, UK
fDate :
Jan. 29 2012-Feb. 2 2012
Abstract :
This paper reports on a simple technique to measure the anisotropy of the Young´s modulus of single crystal silicon using a coupled cantilever structure fabricated in the silicon. We demonstrate that it is possible to determine the Young´s modulus of five silicon micro-cantilevers, whose orientations range from 30γ to 55γ to the wafer flat, by measuring the resonance frequencies of just one single cantilever of the coupled structure in a “perturbed” and “unperturbed” state. In this work the perturbation of the coupled system was achieved by shortening one of the cantilevers using focused ion beam milling. The resulting Young´s modulus values from this experiment agree very well with the theoretical values with a difference of less than 2.5%.
Keywords :
Young´s modulus; cantilevers; elemental semiconductors; milling; silicon; Si; Young´s modulus; focused ion beam milling; microcantilever structure; resonance frequencies; single crystal silicon; Couplings; Frequency measurement; Frequency response; Milling; Resonant frequency; Silicon; Young´s modulus;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-0324-8
DOI :
10.1109/MEMSYS.2012.6170171