DocumentCode :
3546638
Title :
Low-voltage electro-optic Q switching of 1.06-/spl mu/m microlasers by PLZT
Author :
Wang, G.Y. ; Hua Jiang ; Jing Zhao ; Gronin-Golomb, M.
Author_Institution :
NZ Appl. Technol., Woburn, MA, USA
fYear :
1998
fDate :
3-8 May 1998
Firstpage :
485
Lastpage :
486
Abstract :
Summary form only given. Q switching utilizing saturable absorption does not require an external driver; however, the power output and repetition rate are not stable. Acousto-optic or electro-optic (EO) Q switching exhibits more stable performance but requires high rf power or kilovolt voltage due to the small modulation efficiency of KDP and LiNbO/sub 3/. In this paper, we present an innovative PLZT-based EO Q switch. Due to its large EO coefficient, a drive voltage of only 300 V to Q switch a 1.06-/spl mu/m Nd:YVO/sub 4/ laser was measured.
Keywords :
Q-switching; electro-optical switches; ferroelectric ceramics; lanthanum compounds; lead compounds; microcavity lasers; neodymium; optical saturable absorption; solid lasers; 1.06 micron; 300 V; LV electro-optic Q switching; Nd:YVO/sub 4/ laser; PLZT; PLZT-based Q-switch; PbLaZrO3TiO3; YVO/sub 4/:Nd; ferroelectric ceramic; microlasers; saturable absorption; stable performance; Delay effects; Electrooptic effects; Mirrors; Optical pulses; Optical retarders; Polarization; Pump lasers; Space vector pulse width modulation; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
Type :
conf
DOI :
10.1109/CLEO.1998.676529
Filename :
676529
Link To Document :
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